| Volume | Dot Diameter | Dot Height | |
|---|---|---|---|
| Ave. | 0.022nL | 64μm | 12μm |
| 3σ | 0.009nL | 4.5μm | 2.0μm |
Ag sintering paste is a functional material increasingly adopted for die attach and heat sink attach in automotive power semiconductors due to its high thermal and electrical conductivity, as well as its high heat resistance and resistance to bonding degradation.
Currently, it is common for Ag sintering paste to be applied in a planar manner depending on the size of the chip or package. However, with the higher performance of power semiconductors, there is an increasing demand for optimizing the shape of the bonding area to enhance conductive and heat dissipation properties, as well as for thinning to reduce thermal resistance.
To meet these needs, Musashi Engineering has developed a non-contact micro-dotting dispensing technology for Ag sintering paste that enables diverse shape designs beyond just rectangles.
This technology achieves micro-dot formation with a minimum diameter of φ64μm. It can be utilized for dispensing onto micro-areas on substrates and semiconductor packages where conductivity and thermal conductivity are required.

| Volume | Dot Diameter | Dot Height | |
|---|---|---|---|
| Ave. | 0.022nL | 64μm | 12μm |
| 3σ | 0.009nL | 4.5μm | 2.0μm |
This technology enables the formation of thin films with a thickness of 19μm. Furthermore, by forming shapes through dotting, it is possible to create thin films with increased freedom in bonding area shapes, such as L-shapes or round shapes.


By thoroughly optimizing the structure and conditions to match the discharge properties of the Ag paste, we have achieved a dispensing diameter of 31μm and a dispensing volume of 5pL.
Conductive paste can be routed from the substrate, via the side of the chip, to the conductive part on the top surface of the chip.
We have achieved continuous stable dispensing of over 1 million shots for solder pastes from Type 5 to Type 8.
We have successfully performed underfill (UF) agent application while limiting the wetting spread from the chip edge to a minimum of 150μm.
We performed underfill (UF) application under extremely narrow conditions with a chip gap of 100µm and a standoff of 50µm.
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